PUBLIC PAGE SUMMARY
HB04N040S R+O(宏嘉诚) 现货与清单询价
HB04N040S,R+O(宏嘉诚),三极管/MOS管/晶体管 > 场效应管(MOSFET),TO-252封装,询盘确认库存,特性:VDS = 40V。ID = 100A。RDS(on)@VGS = 10V < 4mΩ。RDS(on)@VGS = 4.5V < 6mΩ。雪崩能量测试。快速开关速度。应用:电源开关应用。负载开关
- MPN
- HB04N040S
- 品牌/制造商
- R+O(宏嘉诚)
- 封装
- TO-252
- 库存状态
- 询盘确认
- 资料入口
- /datasheet/HB04N040S
